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| savantic semiconductor product specification silicon pnp power transistors 2SB1430 d escription with to-220f package high dc current gain. low collector saturation voltage. darlington applications ideal for motor drivers and solenoid drivers in such as oa and fa equipment pinning absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -7 v i c collector current -5 a i cm collector current-peak -10 a i b base current -0.5 a t c =25 20 p t total power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1430 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-2a ; i b =-2ma -1.5 v v besat base-emitter saturation voltage i c =-2a ; i b =-2ma -2.0 v i cbo collector cut-off current v cb =-100v;i e =0 -1.0 a i ebo emitter cut-off current v eb =-7v;i c =0 -5.0 ma h fe-1 dc current gain i c =-2a ; v ce =-2v 2000 20000 h fe-2 dc current gain i c =-4a ; v ce =-2v 500 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 60 pf f t transition frequency i c =-0.5a ; v ce =-5v 80 mhz switching times t on turn-on time 0.5 s t stg storage time 1.0 s t f fall time i c =-2a ; i b1 =-i b2 =-2ma v cc @ -50v;r l =25 a 1.0 s h fe-1 classifications m l k 2000-5000 4000-10000 8000-20000 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1430 package outline fig.2 outline dimensions |
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